| PART |
Description |
Maker |
| V826632G24S |
256 MB 200-PIN DDR UNBUFFERED SODIMM 2.5 VOLT 32M x 64
|
Mosel Vitelic, Corp.
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| M470L6524C M470L6524CU0-LCC M470L3324CU0-CA2 M470L |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb C-die DDR SDRAM的缓冲模8 4针缓冲模块的基于C12Mb芯片
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HYMD532646A6-H HYMD532646A6-K HYMD532646A6-L HYMD5 |
DDR SDRAM - Unbuffered DIMM 256MB
Unbuffered DDR SDRAM DIMM
32M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
Hynix Semiconductor
HYNIX SEMICONDUCTOR INC
|
| NT256D64S88B1G NT512D64S8HB0G NT512D64S8HB0G-75B N |
184 pin Unbuffered DDR DIMM
|
ETC[ETC]
|
| HYMP125S64CR8-C4 HYMP125S64CR8-S5 HYMP125S64CR8-S6 |
256M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
64M X 64 DDR DRAM MODULE, 0.4 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
1200pin Unbuffered DDR2 SDRAM SO-DIMMs
|
HYNIX SEMICONDUCTOR INC
Hynix Semiconductor, Inc.
http://
|
| HYMD132645BL8J-J HYMD116G725BL8-M HYMD116G725BL8-L |
32Mx64|2.5V|J|x16|DDR SDRAM - Unbuffered DIMM 256MB
Unbuffered DDR SDRAM DIMM
SDRAM|DDR|16MX72|CMOS|DIMM|184PIN|PLASTIC
|
Hynix Semiconductor
|
| HYMD216726A6-H HYMD216726A6-K HYMD216726A6-L HYMD2 |
Unbuffered DDR SO-DIMM
16Mx72|2.5V|M/K/H/L|x5|DDR SDRAM - Unbuffered DIMM 128MB
|
Hynix Semiconductor
|
| HYMD116725BL8-H HYMD116725BL8-K HYMD116725BL8-L HY |
Unbuffered DDR SDRAM DIMM
SDRAM|DDR|16MX72|CMOS|DIMM|184PIN|PLASTIC
16Mx72|2.5V|M/K/H/L|x9|DDR SDRAM - Unbuffered DIMM 128MB
|
Hynix Semiconductor
http://
|
| HYMD132725B8-H HYMD132725B8-K HYMD132725B8-L HYMD1 |
DDR SDRAM - Unbuffered DIMM 256MB
SDRAM|DDR|32MX72|CMOS|DIMM|184PIN|PLASTIC 内存|复员| 32MX72 |的CMOS |内存| 184PIN |塑料
Unbuffered DDR SDRAM DIMM
|
Hynix Semiconductor
|
